Part Number Hot Search : 
DEM16217 AN79M10 TP60N20T PL27Z VN6035L 7334L263 GP502 19TQ015
Product Description
Full Text Search
 

To Download BUL810 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  inchange semiconductor isc product specification isc silicon npn power transistor BUL810 description high voltage capability high switching speed applications designed for use in lighting applications and low cost swith-mode power supplies. electronic transformer for halogen lamps electronic ballasts for fluorescent lighting switch mode power supplies absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1000 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 9 v i c collector current-continuous 15 a i cm collector current-peak ( tp <5 ms ) 22 a i b b base current-continuous 5 a i bm base current-peak ( tp <5 ms ) 10 a p c collector power dissipation @t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction-case 1.0 /w r th j-a thermal resistance,junction-ambient 30 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUL810 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus ) collector-emitter sustaining voltage i c = 100ma ; l= 25mh 450 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 9 v v ce( sat )-1 collector-emitter saturation voltage i c = 5a ;i b = 1a 1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 8a ;i b = 1.6a 1.5 v v ce( sat )-3 collector-emitter saturation voltage i c = 12a ;i b = 2.4a 5.0 v v be( sat ) base-emitter saturation voltage i c = 5a ;i b = 1a 1.3 v v be( sat ) base-emitter saturation voltage i c = 8a ;i b = 1.6a 1.6 v i ces collector cutoff current v ce =1000v; v be = 0; v ce =1000v; v be = 0;t c =125 0.1 0.5 ma i ceo collector cutoff current v ce = 450v; i b = 0 0.25 ma h fe-1 dc current gain i c = 5a ; v ce = 5v 10 40 h fe-2 dc current gain i c = 10ma ; v ce = 5v 10 switching times (inductive load) t s storage time 1.5 2.3 s t f fall time i c = 8a ;i b1 = 1.6a;v be(off) = -5v r bb = 0.4 , v cl = 350v, l= 200 h 55 110 ns isc website www.iscsemi.cn


▲Up To Search▲   

 
Price & Availability of BUL810

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X